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High-Performance Bilayer WSe2 pFET with Record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V By Direct Growth and Fabrication on SiO2 Substrate

Author:Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu Publish:2022/11/27
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