Xiong Xiong
XIONG XIONG （熊雄）
Date of Birth: 08-05-1993
2011.9~2015.6 B.S. in Electronic Science and Technology
School of Optical and Electronic Information, Huazhong University of Science and Technology, China
2015.9~present Ph.D. in Microelectronics and Solid-State Electronics (degree expected in June 2020)
School of Optical and Electronic Information, Huazhong University of Science and Technology, China
RESEARCH INTERESTS
My research interests focus on two-dimensional materials devices fabrication and characterization based on high-k dielectrics
PUBLICATION
[1]. X. Xiong, M. Huang, B. Hu, X. Li, F. Liu, S. Li, M. Tian, T. Li, J. Song, Y. Wu. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics. 3 (2), 106-112 (2020). (Link)
[2]. X. Xiong, J. Kang, Q. Hu, C. Gu, T. Gao, X. Li, Y. Wu. Reconfigurable logic-in-memory and multi-lingual artificial synapses based on 2D heterostructures. Advanced Functional Materials. 30: 1909645 (2020). (Link)
[3]. X. Xiong, X. Li, M. Huang, T. Li, T. Gao, Y. Wu. High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 39 (1), 127-130 (2018). (Link)
[4]. X. Li, Z. Yu, X. Xiong, T. Li, T. Gao, R. Wang, R. Huang, Y. Wu. High-speed black phosphorus field-effect transistors approaching ballistic limit. Science Advances 5(6): eaau3194 (2019). (Link)
[5]. M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li, Y. Wu. Multifunctional high-performance van der Waals heterostructures. Nature Nanotechnology 12 (12), 1148 (2017). (Link)
[6]. X. Li, X. Xiong, T. Li, T. Gao, Y. Wu. Optimized transport of black phosphorus top gate transistors using alucone dielectrics. IEEE Electron Device Letters 39 (12), 1952-1955 (2018). (Link)
[7]. X. Li, X. Xiong, T. Li, S. Li, Z. Zhang, Y. Wu. Effect of dielectric interface on the performance of MoS2 transistors. ACS Applied Materials & Interfaces 9 (51), 44602-44608 (2017). (Link)